Dual surface defects induced efficient interfacial electron transfer in S-scheme hollow ZnO@ZnS heterojunction for uranium (VI) removal

Liu，Cailing1; Xu，Yiguo3; Peng，Yiyang2; Wang，Hongqing2; Chen，Yinxiang1; Zhang，Ye1,2

2025

10.1016/j.seppur.2024.128172

Separation and Purification Technology   影响因子和分区

1383-5866

1873-3794

Photocatalytic reduction is a promising way to remove radioactive uranium U(VI) in wastewater. Herein, an S-scheme ZnO@ZnS heterojunction with hollow structure and dual-vacancies of Zn and S (Zn, S) is developed. The hollow confined space enhances light trapping ability through multiple light scattering and reflection, while the existence of vacancies extends light absorption, further enhancing the utilization of solar spectrum. Furthermore, the density function theory (DFT) calculations demonstrate that co-sharing of metal atoms at the interface and the Zn and S dual-vacancies induce enhanced internal electric field (IEF), leading to facilitated S-scheme charge transfer, thereby resulting in improved retention of redox potential and suppressed carrier recombination dynamics. ZnO@ZnS shows a highest U(VI) removal rate of 96.48% along with a highest U enrichment of 514.33 mg/g, which is 3.6 and 2.7-folds enhanced compared to pristine ZnO and ZnS, respectively. Through various quenching experiments, a potential new mechanism for the catalytic reduction of U(VI) is proposed. Our findings reveal the involvement of h in the reaction, highlighting its significant catalytic role in the reduction process. Moreover, ZnO@ZnS performs excellent U(VI) extraction ability in open-air conditions without any sacrificial agents, revealing the great significance for practical applications.

Dual surface vacancies Hollow ZnO@ZnO New mechanism S-scheme Uranium removal

英语

其他

CHEMISTRY

2-s2.0-85194945594

Scopus

1.School of Resources Environment and Safety Engineering,University of South China,Hengyang,421001,China
2.Lab of Optoelectronic Technology for Low Dimensional Nanomaterials,School of Chemistry and Chemical Engineering,University of South China,Hengyang,421001,China
3.Academy for Advanced Interdisciplinary Studies,Southern University of Science and Technology,Shenzhen,518055,China

Liu，Cailing,Xu，Yiguo,Peng，Yiyang,et al. Dual surface defects induced efficient interfacial electron transfer in S-scheme hollow ZnO@ZnS heterojunction for uranium (VI) removal[J]. Separation and Purification Technology,2025,352.

Liu，Cailing,Xu，Yiguo,Peng，Yiyang,Wang，Hongqing,Chen，Yinxiang,&Zhang，Ye.(2025).Dual surface defects induced efficient interfacial electron transfer in S-scheme hollow ZnO@ZnS heterojunction for uranium (VI) removal.Separation and Purification Technology,352.

Liu，Cailing,et al."Dual surface defects induced efficient interfacial electron transfer in S-scheme hollow ZnO@ZnS heterojunction for uranium (VI) removal".Separation and Purification Technology 352(2025).