On the deformation mechanism and dislocations evolution in monocrystalline silicon under ramp nanoscratching

Zhen Li1,2,3; Yifan Li1,2,3; Liangchi Zhang1,2,3

2024-02

10.1016/j.triboint.2024.109395

Tribology International   影响因子和分区

0301-679X

Ultra precision machining of monocrystalline silicon to achieve damage-free surface is critical for the semiconductor and optical components. A profound comprehension of the material removal mechanism at the atomic scale is imperative for predicting and inhibiting defects during nanomachining, particularly within the ductile removal regime. This study delves into the deformation behavior and dislocations evolution in monocrystalline silicon, leveraging both ramp nanoscratching experiments and molecular dynamics simulations. The scratching force, friction coefficient and scratch morphologies were obtained in the ductile regime under different scratching velocities and normal loads. The rebounding of the scratched surface, attributed to the elastic deformation of the diamond structure Si and amorphous Si, was characterized by the variation of residual scratching depth and the nominal volume per atom. Furthermore, the transmission electron microscope observation was conducted to analyze the lattice defects including amorphous phase, dislocations and stacking faults in the scratching area. The subsurface exhibited a series of dislocation lines, situated distantly from the amorphous silicon layer, indicating the slipping of dislocations along priority orientations into the subsurface during ramp nanoscratching, which was consistent with the simulation results. Based on this, the dislocations evolution mechanism was elucidated at atomic scale through the analysis of dislocations propagation and the stress distribution. This work provides a theoretical guidance for the processing defects control during the ultra precision machining of monocrystalline silicon.

Deformation mechanism Dislocations evolution Monocrystalline silicon Ramp nanoscratching

SCI

英语

第一 ; 共同第一 ; 通讯

Elsevier BV

ENGINEERING

2-s2.0-85187288316

人工提交

正式出版

1.Shenzhen Key Laboratory of Cross-scale Manufacturing Mechanics, Southern University of Science and Technology, Shenzhen 518055, Guangdong, China
2.SUSTech Institute for Manufacturing Innovation, Southern University of Science and Technology, Shenzhen 518055, Guangdong, China
3.Department of Mechanics and Aerospace Engineering, Southern University of Science and Technology, Shenzhen 518055, Guangdong, China

Zhen Li,Yifan Li,Liangchi Zhang. On the deformation mechanism and dislocations evolution in monocrystalline silicon under ramp nanoscratching[J]. Tribology International,2024,193:109395.

Zhen Li,Yifan Li,&Liangchi Zhang.(2024).On the deformation mechanism and dislocations evolution in monocrystalline silicon under ramp nanoscratching.Tribology International,193,109395.

Zhen Li,et al."On the deformation mechanism and dislocations evolution in monocrystalline silicon under ramp nanoscratching".Tribology International 193(2024):109395.