Effects of temperature on the deformation of 6H–SiC during nanoscratching

Wu，Zhonghuai1,2,3; Zhang，Liangchi4,5,6; Yang，Shengyao3,7; Wu，Chuhan3; Xu，Kemi1,2; Zheng，Dezhi2,8

2023

10.1016/j.wear.2023.204843

Wear   影响因子和分区

0043-1648

1873-2577

With the aid of large-scale molecular dynamics simulations, this paper comprehensively investigated the effects of processing temperature on the deformation of single crystal 6H–SiC during nanoscratching. The effect was investigated across a wide range of temperature variations, from 1 K to 900 K. It was found that with increasing the processing temperature, the material removal mechanism of 6H–SiC experience a transition from intermittent cleavage to continuous plastic deformation. The deformation mechanism of 6H–SiC is achieved by the combination of surface amorphization and subsurface dislocations that reside mainly in the cubic diamond structural layer. The processing temperature significantly affects the dislocation distribution, groove morphology, scratching forces and coefficient of friction. The anisotropic effect on chip formation decreases with increasing the processing temperature. By evaluating surface roughness and the maximum subsurface damage depth, the investigation concludes that the scratched surface/subsurface quality of 6H–SiC deteriorates with increasing processing temperature.

Deformation mechanism Molecular dynamics Nanoscratching Silicon carbide

SCI ; EI

英语

通讯

National Natural Science Foundation of China[52293401];

Engineering ; Materials Science

Engineering, Mechanical ; Materials Science, Multidisciplinary

WOS:000982591900001

ELSEVIER SCIENCE SA

20231513863627

Friction ; Morphology ; Silicon carbide ; Single crystals ; Surface roughness ; Temperature

Thermodynamics:641.1 ; Physical Chemistry:801.4 ; Inorganic Compounds:804.2 ; Physical Properties of Gases, Liquids and Solids:931.2 ; Crystalline Solids:933.1 ; Materials Science:951

MATERIALS SCIENCE

2-s2.0-85151686127

Scopus

1.Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology,School of Optics and Photonics,Beijing Institute of Technology,Beijing,100081,China
2.MIIT Key Laboratory of Complex-field Intelligent Exploration,Beijing Institute of Technology,Beijing,100081,China
3.School of Mechanical and Manufacturing Engineering,The University of New South Wales,2052,Australia
4.Shenzhen Key Laboratory of Cross-scale Manufacturing Mechanics,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China
5.SUSTech Institute for Manufacturing Innovation,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China
6.Department of Mechanics and Aerospace Engineering,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China
7.School of Mechanical and Mining Engineering,The University of Queensland,Brisbane,4072,Australia
8.School of Information and Electronics & Advanced Research Institute of Multidisciplinary Science,Beijing Institute of Technology,Beijing,100081,China

Wu，Zhonghuai,Zhang，Liangchi,Yang，Shengyao,等. Effects of temperature on the deformation of 6H–SiC during nanoscratching[J]. Wear,2023,523.

Wu，Zhonghuai,Zhang，Liangchi,Yang，Shengyao,Wu，Chuhan,Xu，Kemi,&Zheng，Dezhi.(2023).Effects of temperature on the deformation of 6H–SiC during nanoscratching.Wear,523.

Wu，Zhonghuai,et al."Effects of temperature on the deformation of 6H–SiC during nanoscratching".Wear 523(2023).