Optimizing the balance of holes and electrons in inverted quantum dot light-emitting diodes by inserting electron transportation barrier layer

Jiang, Yibin1; Tang, Haoning1; Chen, Shuming1,2; Kwok, Hoi-Sing1

2015

21680159

2015 SID International Symposium

46

Book 1

274-277

San Jose, CA, United states

Blackwell Publishing Ltd

In this study, the hole-electron balance of quantum dot light-emitting diodes (QDLED) was tuned in order to achieve efficiency enhancement This hole-electron balance optimization was realized by inserting thin barrier layer in the electron transportation layer. Although the current density was slightly sacrificed because of the electron blocking of the barrier layer, the charge balance was improved hence leading to 123% efficiency enhancement.
© 2015 SID.

通讯

EI

National Natural Science Foundation of China[61405089]

20161602261245

Diodes ; Efficiency ; Electrons ; Nanocrystals ; Optimization ; Semiconductor quantum dots

Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Production Engineering:913.1 ; Optimization Techniques:921.5

EV Compendex

1.State Key Lab. on Advanced Displays and Optoelectronics, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
2.Department of Electrical and Electronic Engineering, South University of Science and Technology of China, Shenzhen; 518055, China

Jiang, Yibin,Tang, Haoning,Chen, Shuming,et al. Optimizing the balance of holes and electrons in inverted quantum dot light-emitting diodes by inserting electron transportation barrier layer[C]:Blackwell Publishing Ltd,2015:274-277.