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题名

A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation

作者
通讯作者Yu, Shimeng
发表日期
2013-03-25
DOI
发表期刊
ISSN
0935-9648
EISSN
1521-4095
卷号25期号:12页码:1774-1779
摘要

Neuromorphic computing is an emerging computing paradigm beyond the conventional digital von Neumann computation. An oxide-based resistive switching memory is engineered to emulate synaptic devices. At the device level, the gradual resistance modulation is characterized by hundreds of identical pulses, achieving a low energy consumption of less than 1 pJ per spike. Furthermore, a stochastic compact model is developed to quantify the device switching dynamics and variation. At system level, the performance of an artificial visual system on the image orientation or edge detection with 16 348 oxide-based synaptic devices is simulated, successfully demonstrating a key feature of neuromorphic computing: tolerance to device variation.

关键词
相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
重要成果
NI期刊 ; NI论文 ; ESI高被引
学校署名
其他
资助项目
973 Program[2011CBA00602]
WOS研究方向
Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目
Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号
WOS:000316322600018
出版者
EI入藏号
20131316144614
EI主题词
Edge Detection ; Energy Utilization ; Random Access Storage ; Stochastic Systems
EI分类号
Energy Utilization:525.3 ; Data Storage, Equipment And Techniques:722.1 ; Probability Theory:922.1 ; Systems Science:961
ESI学科分类
MATERIALS SCIENCE
来源库
Web of Science
引用统计
被引频次[WOS]:440
成果类型期刊论文
条目标识符//www.snoollab.com/handle/2SGJ60CL/30368
专题
工学院_深港微电子学院
作者单位
1.Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
2.Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA
3.Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
4.South Univ Sci & Technol China, Shenzhen 518055, Peoples R China
5.ASTAR, Inst Microelect, Singapore 117685, Singapore
推荐引用方式
GB/T 7714
Yu, Shimeng,Gao, Bin,Fang, Zheng,et al. A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation[J]. ADVANCED MATERIALS,2013,25(12):1774-1779.
APA
Yu, Shimeng,Gao, Bin,Fang, Zheng,Yu, Hongyu,Kang, Jinfeng,&Wong, H. -S. Philip.(2013).A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation.ADVANCED MATERIALS,25(12),1774-1779.
MLA
Yu, Shimeng,et al."A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation".ADVANCED MATERIALS 25.12(2013):1774-1779.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可 操作
adma.201203680.pdf(1436KB)----限制开放--
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