Low temperature carrier transport study of monolayer MoS2 field effect transistors prepared by chemical vapor deposition under an atmospheric pressure

Liu, Xinke1; He, Jiazhu1; Liu, Qiang2; Tang, Dan1; Wen, Jiao2; Liu, Wenjun3; Yu, Wenjie2; Wu, Jing4; He, Zhubing5; Lu, Youming1; Zhu, Deliang1; Liu, Wenjun1; Cao, Peijiang1; Han, Sun1; Ang, Kah-Wee6

2015-09-28

10.1063/1.4931617

JOURNAL OF APPLIED PHYSICS   影响因子和分区

0021-8979

1089-7550

Large size monolayer Molybdenum disulphide (MoS2) was successfully grown by chemical vapor deposition method under an atmospheric pressure. The electrical transport properties of the fabricated back-gate monolayer MoS2 field effect transistors (FETs) were investigated under low temperatures; a peak field effect mobility of 59 cm(2) V-1 s(-1) was achieved. With the assist of Raman measurement under low temperature, this work identified the mobility limiting factor for the monolayer MoS2 FETs: homopolar phonon scattering under low temperature and electron-polar optical phonon scattering at room temperature. (C) 2015 AIP Publishing LLC.

SCI ; EI

英语

其他

National University of Singapore Faculty Research Committee[R-263-000-B21-133] ; National University of Singapore Faculty Research Committee[R-263-000-B21-731]

Physics

Physics, Applied

WOS:000362565800040

AMER INST PHYSICS

20154001326895

Atmospheric chemistry ; Atmospheric movements ; Atmospheric pressure ; Atmospheric temperature ; Chemical vapor deposition ; Electric field effects ; Layered semiconductors ; Molybdenum compounds ; Monolayers ; Phonon scattering ; Phonons ; Sulfur compounds

Atmospheric Properties:443.1 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Chemical Reactions:802.2

PHYSICS

Web of Science

1.Shenzhen Univ, Nanshan Dist Key Lab Biopolymer & Safety Evaluat, Shenzhen Engn Lab Adv Technol Ceram, Coll Mat Sci & Engn, Shenzhen 518060, Peoples R China
2.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
3.Fudan Univ, Dept Microelect, State Key Lab AS1C & Syst, Shanghai 200433, Peoples R China
4.Natl Univ Singapore, Dept Phys, Singapore 117576, Singapore
5.South Univ Sci & Technol China, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China
6.Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117583, Singapore

Liu, Xinke,He, Jiazhu,Liu, Qiang,et al. Low temperature carrier transport study of monolayer MoS2 field effect transistors prepared by chemical vapor deposition under an atmospheric pressure[J]. JOURNAL OF APPLIED PHYSICS,2015,118(12).

Liu, Xinke.,He, Jiazhu.,Liu, Qiang.,Tang, Dan.,Wen, Jiao.,...&Ang, Kah-Wee.(2015).Low temperature carrier transport study of monolayer MoS2 field effect transistors prepared by chemical vapor deposition under an atmospheric pressure.JOURNAL OF APPLIED PHYSICS,118(12).

Liu, Xinke,et al."Low temperature carrier transport study of monolayer MoS2 field effect transistors prepared by chemical vapor deposition under an atmospheric pressure".JOURNAL OF APPLIED PHYSICS 118.12(2015).