Band alignment of atomic layer deposited high-k Al2O3/multilayer MoS2 interface determined by X-ray photoelectron spectroscopy

Liu, Xinke1; He, Jiazhu1; Tang, Dan1; Liu, Qiang2; Wen, Jiao2; Yu, Wenjie2; Lu, Youming1; Zhu, Deliang1; Liu, Wenjun1; Cao, Peijiang1; Han, Sun1; Pan, Jisheng3; Liu, Wenjun4; Ang, Kah Wee5; He, Zhubing6

2015-11-25

10.1016/j.jallcom.2015.07.207

JOURNAL OF ALLOYS AND COMPOUNDS   影响因子和分区

0925-8388

1873-4669

The energy band alignment between Al2O3/multilayer (ML)-MoS2 was characterized using high-resolution x-ray photoelectron spectroscopy (XPS). The Al2O3 was deposited using an atomic layer deposition (ALD) tool. A valence band offset of 4.10 eV and a conduction band offset of 3.41 eV were obtained across the ALD-Al2O3/ML-MoS2 interface. For comparison, the valence band offset and a conduction band offset were also obtained for ALD-SiO2/ML-MoS2 interface. It was found out that ALD-Al2O3/ML-MoS2 interface has a larger conduction band offset, compared to that of ALD-SiO2/ML-MoS2 interface, which indicate ALD-Al2O3 served as the gate dielectric for n-type ML-MoS2 based field effect transistors has advantage over ALD-SiO2 in term of suppressing the gate leakage current. (C) 2015 Elsevier B.V. All rights reserved.

Multilayer MoS2 High-k Band alignment X-ray photoelectron spectroscopy

SCI ; EI

英语

其他

Shenzhen Innovation and Technology Commission[JCYJ 2014 0418 1819 58489]

Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering

Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering

WOS:000361519300073

ELSEVIER SCIENCE SA

20153401196545

Alumina ; Aluminum oxide ; Conduction bands ; Field effect transistors ; Gate dielectrics ; High-k dielectric ; Layered semiconductors ; Leakage currents ; Low-k dielectric ; Molybdenum compounds ; Photoelectrons ; Photons ; Silica ; Valence bands ; X ray photoelectron spectroscopy

Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Inorganic Compounds:804.2 ; Coating Techniques:813.1 ; Atomic and Molecular Physics:931.3 ; High Energy Physics:932.1

MATERIALS SCIENCE

Web of Science

1.Shenzhen Univ, Shenzhen Key Lab Special Funct Mat, Shenzhen Engn Lab Adv Technol Ceram, Coll Mat Sci & Engn, Shenzhen 518060, Peoples R China
2.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
3.Agcy Sci Technol & Res, Inst Mat Res & Engn, Singapore 117602, Singapore
4.Fudan Univ, Dept Microelect, Shanghai 200433, Peoples R China
5.Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117583, Singapore
6.South Univ Sci & Technol China, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China

Liu, Xinke,He, Jiazhu,Tang, Dan,et al. Band alignment of atomic layer deposited high-k Al2O3/multilayer MoS2 interface determined by X-ray photoelectron spectroscopy[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2015,650:502-507.

Liu, Xinke.,He, Jiazhu.,Tang, Dan.,Liu, Qiang.,Wen, Jiao.,...&He, Zhubing.(2015).Band alignment of atomic layer deposited high-k Al2O3/multilayer MoS2 interface determined by X-ray photoelectron spectroscopy.JOURNAL OF ALLOYS AND COMPOUNDS,650,502-507.

Liu, Xinke,et al."Band alignment of atomic layer deposited high-k Al2O3/multilayer MoS2 interface determined by X-ray photoelectron spectroscopy".JOURNAL OF ALLOYS AND COMPOUNDS 650(2015):502-507.