题名 | Solution-processed vanadium oxide as an efficient hole injection layer for quantum-dot light-emitting diodes |
作者 | |
通讯作者 | Chen, Shuming |
发表日期 | 2017-01-28
|
DOI | |
发表期刊 | |
ISSN | 2050-7526
|
EISSN | 2050-7534
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卷号 | 5期号:4页码:817-823 |
摘要 | PEDOT:PSS (polyethylene dioxythiophene: polystyrenesulfonate) is widely used as a hole injection layer (HIL) for various optoelectronic devices because of its high conductivity and high work-function. However, the acidic and hygroscopic nature of PEDOT: PSS are detrimental to the long-term stability of the devices. In this work, we develop a solution processed vanadium pentoxide (V2O5) as an alternative to the PEDOT: PSS. The sol-gel derived V2O5 is easily obtained by spin-coating the vanadium oxytriisopropoxide solution, followed by thermal annealing at 120 degrees C for 1 min. With the proposed V2O5 HIL, quantum dot light-emitting diodes (QLEDs) exhibit a maximum current efficiency of 10.91 cd A(-1) and a peak EQE of 7.25%, which are very close to those of devices with a conventional PEDOT: PSS HIL. Moreover, by substituting the problematic PEDOT: PSS with the inorganic V2O5, the stability/lifetime of the QLEDs is substantially improved. Our results demonstrate that the sol-gel derived V2O5 is an effective alternative to PEDOT: PSS for efficient, low cost and stable QLED devices. |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 通讯
|
资助项目 | National Key Research and Development Program of China[2016YFB0401702]
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WOS研究方向 | Materials Science
; Physics
|
WOS类目 | Materials Science, Multidisciplinary
; Physics, Applied
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WOS记录号 | WOS:000395424000005
|
出版者 | |
EI入藏号 | 20170503311435
|
EI主题词 | Charge Injection
; Conducting Polymers
; Electron Injection
; Nanocrystals
; Optoelectronic Devices
; Semiconductor Quantum Dots
; Sol-gel Process
; Sol-gels
; Vanadium Pentoxide
|
EI分类号 | Conducting Materials:708.2
; Semiconductor Devices And Integrated Circuits:714.2
; Optical Devices And Systems:741.3
; Nanotechnology:761
; Chemical Products Generally:804
; Glass:812.3
|
来源库 | Web of Science
|
引用统计 |
被引频次[WOS]:79
|
成果类型 | 期刊论文 |
条目标识符 | //www.snoollab.com/handle/2SGJ60CL/29169 |
专题 | 工学院_电子与电气工程系 |
作者单位 | Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China |
第一作者单位 | 电子与电气工程系 |
通讯作者单位 | 电子与电气工程系 |
第一作者的第一单位 | 电子与电气工程系 |
推荐引用方式 GB/T 7714 |
Zhang, Heng,Wang, Siting,Sun, Xiaowei,et al. Solution-processed vanadium oxide as an efficient hole injection layer for quantum-dot light-emitting diodes[J]. Journal of Materials Chemistry C,2017,5(4):817-823.
|
APA |
Zhang, Heng,Wang, Siting,Sun, Xiaowei,&Chen, Shuming.(2017).Solution-processed vanadium oxide as an efficient hole injection layer for quantum-dot light-emitting diodes.Journal of Materials Chemistry C,5(4),817-823.
|
MLA |
Zhang, Heng,et al."Solution-processed vanadium oxide as an efficient hole injection layer for quantum-dot light-emitting diodes".Journal of Materials Chemistry C 5.4(2017):817-823.
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条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
c6tc04050k.pdf(3413KB) | -- | -- | 限制开放 | -- |
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