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题名

Solution-processed vanadium oxide as an efficient hole injection layer for quantum-dot light-emitting diodes

作者
通讯作者Chen, Shuming
发表日期
2017-01-28
DOI
发表期刊
ISSN
2050-7526
EISSN
2050-7534
卷号5期号:4页码:817-823
摘要

PEDOT:PSS (polyethylene dioxythiophene: polystyrenesulfonate) is widely used as a hole injection layer (HIL) for various optoelectronic devices because of its high conductivity and high work-function. However, the acidic and hygroscopic nature of PEDOT: PSS are detrimental to the long-term stability of the devices. In this work, we develop a solution processed vanadium pentoxide (V2O5) as an alternative to the PEDOT: PSS. The sol-gel derived V2O5 is easily obtained by spin-coating the vanadium oxytriisopropoxide solution, followed by thermal annealing at 120 degrees C for 1 min. With the proposed V2O5 HIL, quantum dot light-emitting diodes (QLEDs) exhibit a maximum current efficiency of 10.91 cd A(-1) and a peak EQE of 7.25%, which are very close to those of devices with a conventional PEDOT: PSS HIL. Moreover, by substituting the problematic PEDOT: PSS with the inorganic V2O5, the stability/lifetime of the QLEDs is substantially improved. Our results demonstrate that the sol-gel derived V2O5 is an effective alternative to PEDOT: PSS for efficient, low cost and stable QLED devices.

相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
学校署名
通讯
资助项目
National Key Research and Development Program of China[2016YFB0401702]
WOS研究方向
Materials Science ; Physics
WOS类目
Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号
WOS:000395424000005
出版者
EI入藏号
20170503311435
EI主题词
Charge Injection ; Conducting Polymers ; Electron Injection ; Nanocrystals ; Optoelectronic Devices ; Semiconductor Quantum Dots ; Sol-gel Process ; Sol-gels ; Vanadium Pentoxide
EI分类号
Conducting Materials:708.2 ; Semiconductor Devices And Integrated Circuits:714.2 ; Optical Devices And Systems:741.3 ; Nanotechnology:761 ; Chemical Products Generally:804 ; Glass:812.3
来源库
Web of Science
引用统计
被引频次[WOS]:79
成果类型期刊论文
条目标识符//www.snoollab.com/handle/2SGJ60CL/29169
专题工学院_电子与电气工程系
作者单位
Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
第一作者单位电子与电气工程系
通讯作者单位电子与电气工程系
第一作者的第一单位电子与电气工程系
推荐引用方式
GB/T 7714
Zhang, Heng,Wang, Siting,Sun, Xiaowei,et al. Solution-processed vanadium oxide as an efficient hole injection layer for quantum-dot light-emitting diodes[J]. Journal of Materials Chemistry C,2017,5(4):817-823.
APA
Zhang, Heng,Wang, Siting,Sun, Xiaowei,&Chen, Shuming.(2017).Solution-processed vanadium oxide as an efficient hole injection layer for quantum-dot light-emitting diodes.Journal of Materials Chemistry C,5(4),817-823.
MLA
Zhang, Heng,et al."Solution-processed vanadium oxide as an efficient hole injection layer for quantum-dot light-emitting diodes".Journal of Materials Chemistry C 5.4(2017):817-823.
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