Monolayer WxMo1-xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors

Monolayer WxMo1-xS2-based field effect transistors are demonstrated for the first time on the monolayer WxMo1-xS2 flake, which is grown by the chemical vapor deposition method under an atmospheric pressure. Detailed material studies using Raman and photoluminescence measurements have been carried out on the as-grown monolayer WxMo1-xS2. Electronic band structure of monolayer WxMo1-xS2 has been calculated using first-principle theory. The thermal stability of monolayer WxMo1-xS2 has been evaluated using Raman-temperature measurement. Carrier transport study on the fabricated WxMo1-xS2 FETs has been analyzed using temperature-dependent current measurement, and a field effect mobility of approximate to 30 cm(2) V-1 s(-1) at 300 K is obtained.