Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil

Xu, Xiaozhi1,2; Zhang, Zhihong1,2; Dong, Jichen3; Yi, Ding3; Niu, Jingjing1; Wu, Muhong1; Lin, Li4; Yin, Rongkang5; Li, Mingqiang1; Zhou, Jingyuan4; Wang, Shaoxin1; Sun, Junliang6; Duan, Xiaojie4,5; Gao, Peng1,4,7; Jiang, Ying7,8; Wu, Xiaosong1,7; Peng, Hailin4; Ruoff, Rodney S.3,9; Liu, Zhongfan4; Yu, Dapeng1,7,10; Wang, Enge7,8; Ding, Feng3,11; Liu, Kaihui1,4,7

2017-08-15

10.1016/j.scib.2017.07.005

Science Bulletin   影响因子和分区

2095-9273

2095-9281

A foundation of the modern technology that uses single-crystal silicon has been the growth of highquality single-crystal Si ingots with diameters up to 12 inches or larger. For many applications of graphene, large-area high-quality (ideally of single-crystal) material will be enabling. Since the first growth on copper foil a decade ago, inch-sized single-crystal graphene has been achieved. We present here the growth, in 20 min, of a graphene film of (5 x 50) cm(2) dimension with >99% ultra-highly oriented grains. This growth was achieved by: (1) synthesis of metre-sized single-crystal Cu(1 1 1) foil as substrate; (2) epitaxial growth of graphene islands on the Cu(1 1 1) surface; (3) seamless merging of such graphene islands into a graphene film with high single crystallinity and (4) the ultrafast growth of graphene film. These achievements were realized by a temperature-gradient-driven annealing technique to produce single-crystal Cu(1 1 1) from industrial polycrystalline Cu foil and the marvellous effects of a continuous oxygen supply from an adjacent oxide. The as-synthesized graphene film, with very few misoriented grains (if any), has a mobility up to similar to 23,000 cm(2) V-1 s(-1) at 4 K and room temperature sheet resistance of similar to 230 Omega/rectangle. It is very likely that this approach can be scaled up to achieve exceptionally large and high-quality graphene films with single crystallinity, and thus realize various industrial-level applications at a low cost. (C)2017 Science China Press. Published by Elsevier B.V. and Science China Press. All rights reserved.

Single-crystal Industrial Cu Graphene Ultrafast Epitaxial

SCI ; EI

英语

ESI高被引

其他

National Program for Thousand Young Talents of China and the Institute for Basic Science of Korea[IBS-R019-D1]

Science & Technology - Other Topics

Multidisciplinary Sciences

WOS:000409432100009

SCIENCE PRESS

20173404075562

Copper ; Film growth ; Graphene ; Metal castings ; Metal cladding ; Oxygen supply ; Silicon wafers ; Single crystals

Foundry Practice:534.2 ; Copper:544.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Chemical Products Generally:804 ; Crystalline Solids:933.1 ; Crystal Growth:933.1.2

Web of Science

1.Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
2.Peking Univ, Acad Adv Interdisciplinary Studies, Beijing 100871, Peoples R China
3.Inst Basic Sci, CMCM, Ulsan 689798, South Korea
4.Peking Univ, Coll Chem & Mol Engn, Ctr Nanochem, Beijing 100871, Peoples R China
5.Peking Univ, Dept Biomed Engn, Coll Engn, Beijing 100871, Peoples R China
6.Peking Univ, Coll Chem & Mol Engn, Beijing 100871, Peoples R China
7.Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
8.Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China
9.Ulsan Natl Inst Sci & Technol, Dept Chem, Ulsan 689798, South Korea
10.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
11.Ulsan Natl Inst Sci & Technol, Sch Mat Sci & Engn, Ulsan 689798, South Korea

Xu, Xiaozhi,Zhang, Zhihong,Dong, Jichen,et al. Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil[J]. Science Bulletin,2017,62(15):1074-1080.

Xu, Xiaozhi.,Zhang, Zhihong.,Dong, Jichen.,Yi, Ding.,Niu, Jingjing.,...&Liu, Kaihui.(2017).Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil.Science Bulletin,62(15),1074-1080.

Xu, Xiaozhi,et al."Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil".Science Bulletin 62.15(2017):1074-1080.