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题名	Full color quantum dot light-emitting diodes patterned by photolithography technology
作者	Ji, Tingjing; Jin, Shuang; Zhang, Heng; Chen, Shuming; Sun, Xiao Wei
通讯作者	Chen, Shuming
发表日期	2018-03
DOI	10.1002/jsid.640
发表期刊	Journal of the Society for Information Display 影响因子和分区
ISSN	1071-0922
EISSN	1938-3657
卷号	26 期号:3页码:121-127
摘要	Quantum dot light-emitting diodes are promising candidates for next generation displays. For display application, a pixel consists of red (R), green (G), and blue (B) side-by-side sub-pixels, which thereby requires a high resolution patterning of the light-emission layers. In this work, the quantum dot (QD) light-emitting layers are fine patterned by using the photolithography and the lift-off techniques. To facilitate the lift-off process, reverse photoresist AZ5214E is used because of its special inverted trapezoidal structure after developing. To prevent the QDs being washed off during the lift-off process, the ZnMgO layer is treated by the hydrophobic material hexamethyldisilazane. With hexamethyldisilazane treatment, the adhesion between the QDs and the ZnMgO is effectively improved. As a result, side-by-side R/G/B QD with pixel size of 30mx120m is successfully achieved. After patterning, the R, G, and B-quantum dot light-emitting diodes exhibit a maximum current efficiency of 11.6cd/A, 29.7cd/A, and 1.5cd/A, respectively. This work confirms the feasibility of patterning QDs by using the photolithography and the lift-off techniques.
关键词	quantum dots light-emitting diodes color patterning high resolution photolithography
相关链接	[来源记录]
收录类别	SCI ; EI
语种	英语
学校署名	第一 ; 通讯
资助项目	Shenzhen Peacock Plan[KQTD2015071710313656]
WOS研究方向	Engineering ; Materials Science ; Optics ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Optics ; Physics, Applied
WOS记录号	WOS:000434142400001
出版者	WILEY
EI入藏号	20181404974668
EI主题词	Diodes ; Light emitting diodes ; Magnesium compounds ; Nanocrystals ; Organic light emitting diodes (OLED) ; Photolithography ; Photoresists ; Pixels ; Zinc compounds
EI分类号	Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761
来源库	Web of Science
引用统计	被引频次[WOS]：32
成果类型	期刊论文
条目标识符	//www.snoollab.com/handle/2SGJ60CL/27952
专题	工学院_电子与电气工程系
作者单位	Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
第一作者单位	电子与电气工程系
通讯作者单位	电子与电气工程系
第一作者的第一单位	电子与电气工程系
推荐引用方式 GB/T 7714	Ji, Tingjing,Jin, Shuang,Zhang, Heng,et al. Full color quantum dot light-emitting diodes patterned by photolithography technology[J]. Journal of the Society for Information Display,2018,26(3):121-127.
APA	Ji, Tingjing,Jin, Shuang,Zhang, Heng,Chen, Shuming,&Sun, Xiao Wei.(2018).Full color quantum dot light-emitting diodes patterned by photolithography technology.Journal of the Society for Information Display,26(3),121-127.
MLA	Ji, Tingjing,et al."Full color quantum dot light-emitting diodes patterned by photolithography technology".Journal of the Society for Information Display 26.3(2018):121-127.