Realization of near-perfect absorption in the whole reststrahlen band of SiC

Chen, Dongxue1; Dong, Jianjie1; Yang, Jianji2; Hua, Yilei3; Li, Guixin4; Guo, Chuanfei4; Xie, Changqing3; Liu, Ming3; Liu, Qian1,5

2018-05-28

10.1039/c8nr01706a

Nanoscale   影响因子和分区

2040-3364

2040-3372

Materials used for outdoor radiative cooling technologies need not only be transparent in the solar spectral region, but also need to have a broadband perfect absorption in the infrared atmospheric transparency window (infrared-ATW). Silicon carbide (SiC) has been thought to be a potential candidate for such materials. However, due to the near-perfect reflection of electromagnetic waves in the whole reststrahlen band (RB) of SiC, which is within the infrared-ATW, perfect absorption in the whole RB remains a challenge. Here by constructing a cone-pillar double-structure surface on SiC, a near-perfect absorption (>97%) of normally incident electromagnetic waves in the whole RB has been realized experimentally. Simulation results reveal that the dominant reason for the near-perfect absorption is the efficient coupling of incident electromagnetic waves into the bulk evanescent waves in the free-space wavelength range (10.33 m, 10.55 m) and the efficient coupling of incident electromagnetic waves into the surface phonon polaritons in the free-space wavelength range (10.55 m, 12.6 m). Our findings open up an avenue to enhance the absorption performance of SiC in infrared-ATW, and may lead to many new applications.

SCI ; EI

英语

其他

Eu-FP7 Project[247644]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied

WOS:000433260300003

ROYAL SOC CHEMISTRY

20182205244151

Circular waveguides ; Electromagnetic waves ; Phonons ; Silicon carbide

Heat Transfer:641.2 ; Electromagnetic Waves:711 ; Waveguides:714.3 ; Inorganic Compounds:804.2

Web of Science

1.Natl Ctr Nanosci & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China
2.Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
3.Chinese Acad Sci, Inst Microelect, CKey Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
4.Southern Univ Sci & Technol, Dept Mat Sci & Engn, 1088 Xueyuan Blvd, Shenzhen 518055, Guangdong, Peoples R China
5.Chinese Acad Sci, Suzhou Inst Nanotech & Nanob, Suzhou 212213, Peoples R China

Chen, Dongxue,Dong, Jianjie,Yang, Jianji,et al. Realization of near-perfect absorption in the whole reststrahlen band of SiC[J]. Nanoscale,2018,10(20):9450-9454.

Chen, Dongxue.,Dong, Jianjie.,Yang, Jianji.,Hua, Yilei.,Li, Guixin.,...&Liu, Qian.(2018).Realization of near-perfect absorption in the whole reststrahlen band of SiC.Nanoscale,10(20),9450-9454.

Chen, Dongxue,et al."Realization of near-perfect absorption in the whole reststrahlen band of SiC".Nanoscale 10.20(2018):9450-9454.