High-performance photodetector and its optoelectronic mechanism of MoS2/WS2 vertical heterostructure

Lin，Xin1; Wang，Fang1; Shan，Xin1; Miao，Yinping1; Chen，Xudong2; Yan，Meng1; Zhang，Lifang1; Liu，Kai3; Luo，Jun2; Zhang，Kailiang1

2021-04-30

10.1016/j.apsusc.2021.149074

APPLIED SURFACE SCIENCE   影响因子和分区

0169-4332

Two-dimensional heterostructures based on transition metal dichalcogenides (TMDCs) exhibit enhanced electrical and optoelectrical properties, which are promising for next-generation optoelectronics devices. In this work, we demonstrate the preparation of MoS/WS vertical heterostructure and investigate their photoresponse properties by fabricating n-type photodetectors with titanium (Ti) as source-drain electrode. Uniform MoS and WS films are synthesized on SiO/Si substrates by chemical vapor deposition (CVD) method respectively, and then MoS/WS vertical heterostructures are achieved via transferring MoS onto WS films. The WS- and MoS-based devices exhibit on/off ratio and electron mobility of 10, 0.03 cmVS and > 10, 2.6 cmVS at V = 6 V. Notably, the MoS/WS heterostructure photodetector achieves on/off ratio of near 10 and electron mobility of 12.6 cmVS, which is higher than that of pure WS and MoS devices. The photodetector based on MoS/WS heterostructure shows enhanced optoelectronic performance with photoresponsivity of 298 A/W and specific detectivity of 2.38 × 10 Jones under 405 nm laser with the power density of 0.09 mW/cm. Simultaneously, fast photoresponse speed of 9 ms is obtained owing to the speed of separating and recombining electron-hole pairs. The photodetectors exhibit excellent stability and repeatability to laser, which provides more possibilities for future electronic and optoelectronic applications.

MoS2/WS2 On/off ratio Photodetector Photoresponsivity Response time

SCI ; EI

英语

其他

WOS:000620366000004

20210509842855

Chemical vapor deposition ; Electron mobility ; Molybdenum compounds ; Photodetectors ; Photons ; Silica ; Silicon ; Titanium compounds ; Transition metals ; Tungsten compounds

Metallurgy and Metallography:531 ; Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Semiconducting Materials:712.1 ; Chemical Reactions:802.2 ; Atomic and Molecular Physics:931.3

MATERIALS SCIENCE

2-s2.0-85099873568

Scopus

1.Tianjin Key Laboratory of Film Electronic & Communication Devices,School of Electrical & Electronic Engineering,Tianjin University of Technology,Tianjin,300384,China
2.MOE International Joint Laboratory of Materials Microstructure,Institute for New Energy Materials and Low Carbon Technologies,School of Material Science and Engineering,Tianjin University of Technology,Tianjin,300384,China
3.Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China

Lin，Xin,Wang，Fang,Shan，Xin,et al. High-performance photodetector and its optoelectronic mechanism of MoS2/WS2 vertical heterostructure[J]. APPLIED SURFACE SCIENCE,2021,546.

Lin，Xin.,Wang，Fang.,Shan，Xin.,Miao，Yinping.,Chen，Xudong.,...&Zhang，Kailiang.(2021).High-performance photodetector and its optoelectronic mechanism of MoS2/WS2 vertical heterostructure.APPLIED SURFACE SCIENCE,546.

Lin，Xin,et al."High-performance photodetector and its optoelectronic mechanism of MoS2/WS2 vertical heterostructure".APPLIED SURFACE SCIENCE 546(2021).