High performance top-emitting quantum dot light-emitting diodes with interfacial modification

In this paper, we report high performance top-emitting quantum dot light-emitting diodes (TE-QLEDs) with an interfacial modification layer. The specular metal bottom electrode was modified by an interfacial layer to improve the wettability of the aqueous solution on a metal electrode. By doing so, the potential barrier between the metal electrode and hole injection layer is decreased and the hole injection is enhanced. The capacitance analysis was used to understand the charge transfer process of the TE-QLEDs. The result showed that the indium tin oxide (ITO) interface layer is the best among NiOx, MoO3, and ITO. As a consequence, the red TE-QLEDs with an ITO interfacial modification layer show a maximum luminance and maximum external quantum efficiency of 18 880 cd/m(2) and 11.8%, respectively. Our works indicate that the interfacial modification with metal oxides is an effective approach for high performance TE-QLEDs.